Optical, electrical properties and reproducible resistance switching of GeO2 thin films by sol–gel process
| Autor: | Pai-Chuan Yang, Wen-Shiush Chen, Yi-Da He, Shu-Fong Yang, Cheng-Hsing Hsu, Jenn-Sen Lin |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Metals and Alloys Mineralogy Surfaces and Interfaces Dielectric Microstructure Grain size Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resistive random-access memory Non-volatile memory Materials Chemistry Optoelectronics Thin film business Sol-gel |
| Zdroj: | Thin Solid Films. 519:5033-5037 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.01.123 |
| Popis: | Electrical, optical properties and microstructures of GeO 2 thin films prepared by the sol–gel method on ITO substrates at different preheating and annealing temperatures have been investigated. All films exhibited GeO 2 (101) orientations perpendicular to the substrate surface and the grain size increased with increasing preheating and annealing temperature. The dependence of the microstructure, optical transmittance spectra, optical bandgap and dielectric characteristics on preheating and annealing temperatures was also investigated. Considering the primary memory switching behavior of GeO 2 , ReRAM based on GeO 2 shows promise for future nonvolatile memory applications. |
| Databáze: | OpenAIRE |
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