| Autor: |
Hansoo Kim, Hyung Mo Yang, Ji Woong Sue, Seok Sik Kim, Juhyeon Ahn, Ji Woon Rim, Ki Hyun Hwang, Sang In Kim, Hee Seong Yang, Yu Gyun Shin, Sun Kyu Whang, Woon Kyung Lee, Han Ku Cho |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. |
| DOI: |
10.1109/ipfa.2012.6306313 |
| Popis: |
The technology of increasing Internal Vcc without using memory tester is used to enhance the photon emission and the failure range is defined in detail by nano probing. With these methods, we found out that the leakage current was caused by dislocations of STI arranged in a row. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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