Novel silicon carbide mosfet's for monolithic integrated circuits

Autor:	C.D. Brandt, T.J. Smith, Rowland C. Clarke, S. Sriram, R.R. Siergiej, A.A. Burk, Anant K. Agarwal, P.G. McMullin, H.M. Hobgood, P.A. Orphanos
Rok vydání:	2005
Předmět:	Materials science business.industry Transconductance Electrical engineering Integrated circuit law.invention chemistry.chemical_compound Thermal conductivity chemistry law MOSFET Silicon carbide Optoelectronics Mosfet circuits business
Zdroj:	52nd Annual Device Research Conference.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::04ba92b001b952bf70ce5f930e82bf33 https://doi.org/10.1109/drc.1994.1009400 Zobrazit plný text záznamu