Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design
| Autor: | Pravin N. Kondekar, Sangeeta Singh, Aishwarya Kaity |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Fabrication Materials science Silicon Dopant business.industry Doping chemistry.chemical_element Drain-induced barrier lowering Short-channel effect 02 engineering and technology 021001 nanoscience & nanotechnology Tunnel field-effect transistor 01 natural sciences Electronic Optical and Magnetic Materials Threshold voltage chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | Silicon. 13:9-23 |
| ISSN: | 1876-9918 1876-990X |
| DOI: | 10.1007/s12633-020-00404-6 |
| Popis: | This work investigates the novel device structure, silicon-on-nothing electrostatically doped junctionless tunnel field effect transistor (SON-ED-JLTFET) with high-K stacked hetero-gate technology for its short channel effects (SCEs) immune properties. Here, its analog/RF device performance metrices are also analyzed using calibrated 2-D technology computer-aided design (TCAD) simulation study. This device is expected to exhibit the fundamental advantages of SON technology, i.e. it should be more immune towards SCEs, like threshold voltage roll-off, drain induced barrier lowering (DIBL) even for devices with less than 10 nm channel length. Moreover, owing to its electrostatic doping instead of metallurgical doping, the detrimental doping control issues, such as mobility degradation, higher fabrication thermal budget and statistical random dopant fluctuations (RDFs) can no more degrade the device performance. This helps in realization of more process variations immune design. Here the detailed device sensitivity analysis with respect to the various crucial devices dimensional parameters variation is also carried out. |
| Databáze: | OpenAIRE |
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