Germanium Photodetectors for Photonics on CMOS

Autor:	Mathieu Rouviere, Suzanne Laval, Yves Le Cunff, S. Poncet, Daniel Pascal, Jean-Francois Damlencourt, Laurent Vivien, P. Grosse, Xavier Le Roux, Delphine Morini, Loubna El Melhaoui, Eric Cassan, Jean-Marc Fedeli, Vincent Mazzochi
Rok vydání:	2006
Předmět:	CMOS chemistry business.industry media_common.quotation_subject Photodetector chemistry.chemical_element Germanium Art Photonics business Humanities media_common
Zdroj:	ECS Transactions. 3:771-777
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2355871
Popis:	Different technologies for the fabrication of Germanium photodetectors were developed. Germanium was grown by RPCVD in a silicon cavity in order to provide a direct coupling with a rib silicon waveguide. With direct deposition of Ti/TiN/AlCu on Ge, Metal-Schotkky-Metal (MSM) diodes were formed. PIN photodiode were fabricated either with in-situ doping during RP- CVD epitaxy of Ge, either by ion implantation. For vertical PIN photodiode, the germanium was successfully etched either in mesa either anisotropically with Cl2 gazes. Small footprint Ge photodiodes can lead to high speed operation on CMOS
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::04a901ae0f0fc51b7782931e332c6eb8 https://doi.org/10.1149/1.2355871 Zobrazit plný text záznamu