Constant ΔTj Power Cycling Strategy in DC Mode for Top-Metal and Bond-Wire Contacts Degradation Investigations

Autor: Zoubir Khatir, Ali Ibrahim, Son-Ha Tran, Richard Lallemand, Stefan Mollov, Jean-Pierre Ousten, Jeffrey Ewanchuk
Rok vydání: 2019
Předmět:
Zdroj: IEEE Transactions on Power Electronics. 34:2171-2180
ISSN: 1941-0107
0885-8993
DOI: 10.1109/tpel.2018.2847234
Popis: The study of the impact of junction temperature swings (Δ Tj ) on degradation mechanisms during power cycling tests (PCTs) requires both a control of the applied thermal stress and a separation of degradation modes. The first requirement can be obtained by using a “constant Δ Tj ” power cycling strategy that allows to minimize the cross interactions between the influencing factors. The second one is made by using a dedicated power module well suited for targeting only the chips top-side degradations (metallization and bond-wire contacts). In this paper, a constant Δ Tj strategy by gate voltage regulation is performed for PCTs in the dc mode. The tested modules are ideally designed for top-metal and bond-wire contacts degradation investigations. From aging indicator on the collector–emitter voltage ( V CE), the results clearly show that three regimes of degradation occur systematically at the insulated gate bipolar transistor (IGBT) chips top side, whatever the stress conditions. Moreover, comparative results in “constant Δ Tj ” and conventional “constant Δ I ” PCT strategies have shown that the feedback between stresses and damages encountered in the second strategy is more important for low Δ Tj values than for high Δ Tj values. In addition, results show that in case of high stresses, the “constant Δ Tj ” strategy with V GE regulation gives values close to a “constant Δ I ” strategy but that the extrapolation toward low values of Δ Tj can be questionable for the “constant Δ Tj ” strategy.
Databáze: OpenAIRE