| Autor: |
H. Mitlehner, D. Stephani, Benno Weis, U. Weinert, Peter Friedrichs, R. Schoerner, Dethard Peters |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094). |
| DOI: |
10.1109/ispsd.2000.856816 |
| Popis: |
New results of silicon carbide p-n diodes show a promising performance for high voltage applications. The diodes are characterized by high power ratings, temperature stability, rugged avalanche and fast switching behavior. Significant savings in system cooling equipment seem possible. However, with today's available material the device areas and thereby current ratings which can be fabricated with reasonable yield are restricted to a few square mm resp. a few amps. The SiC p-n diodes are fabricated with implanted p-regions on 39 /spl mu/m thick n-type epitaxial layers with a doping concentration of 2/spl times/10/sup 15/ cm/sup -3/. They exhibit a stable avalanche breakdown at 4800 V and a low leakage current ( |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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