Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors

Autor:	A. N. Chakravarti, D. R. Choudhury, A. K. Chowdhury
Rok vydání:	1980
Předmět:	Physics Semiconductor Condensed matter physics business.industry General Engineering General Materials Science Magnetic pressure General Chemistry business Capacitance Magnetic field
Zdroj:	Applied Physics. 22:145-148
ISSN:	1432-0630 0340-3793
DOI:	10.1007/bf00885997
Popis:	An attempt is made to investigate the effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors havingn-channel inversion layers under the weak electric-field limit. It is found, takingn-channel InSb as an example, that both the MOS and surface capacitances show spiky oscillations with changing magnetic field. It is further observed that the sharpness and the depths of the spikes increase with increasing magnetic field whereas the depths are found to decrease with increasing thickness of the insulating layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::04821d83b40e2c852335a9862fbd157a https://doi.org/10.1007/bf00885997 Zobrazit plný text záznamu Full text from SpringerLink