Study on Electrostatic Discharge Damage and Defect Damage Failure Analysis Technology for Semiconductor Devices

Autor: JI Qi-zheng, HE Sheng-zong, Wang You-liang, Hu Lin, LiANG Xiao-si
Rok vydání: 2018
Předmět:
Zdroj: 2018 19th International Conference on Electronic Packaging Technology (ICEPT).
DOI: 10.1109/icept.2018.8480420
Popis: With the increase of integration and process complexity on semiconductor device, electrostatic discharge damage and defect damage have become an important cause of semiconductor device failure. However, electrostatic discharge damage and defect damage have some difficult in the failure analysis of semiconductor devices. By introducing the typical defects of semiconductor devices, by comparing the features and failure analysis techniques of electrostatic discharge damage and defect damage of semiconductor devices. Finally, through the specific failure analysis cases in the application process of semiconductor devices, we obtained the method for analysis the electrostatic discharge damage and defect damage of semiconductor device, and the technology method provides guidance for the improvement and control of the reliability of electronic products.
Databáze: OpenAIRE