Raman Scattering Study on Mn Composition in Diluted Magnetic Semiconductor Gal-xMnXSb Prepared by LPE Method

Autor: Masayoshi Yamada, N.F. Chen, Md. Rafiqul Islam
Rok vydání: 2006
Předmět:
Zdroj: 2006 International Conference on Electrical and Computer Engineering.
DOI: 10.1109/icece.2006.355650
Popis: Raman scattering experiments have been performed in diluted magnetic semiconductor Ga1 - xMnxSb prepared by liquid phase epitaxy. The Raman spectra measured from various Ga1 - xMnxSb samples show GaSb-like phonon modes, which are found to be shifted in lower frequency direction due to Mn composition. The compositional dependence of LOGsSb phonon frequency has been suggested with the combination of Raman scattering and energy dispersive X-ray (EDX) experiments. Using the compositional dependence of LOGsSb, the Mn compositions estimated from various Ga1 - xMnxSb samples are found to be in good agreement with those evaluated by EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are determined by reduced-mass model.
Databáze: OpenAIRE