Possible origin of ferromagnetism in (Ga,Mn)N
| Autor: | Ewa Grzanka, M. Zajac, Maria Kaminska, J. Gosk, Andrzej Twardowski, Slawomir Podsiadlo, B. Strojek, T. Szyszko |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Condensed matter physics Doping Wide-bandgap semiconductor General Physics and Astronomy chemistry.chemical_element Manganese Magnetic semiconductor Nitride Condensed Matter::Materials Science Crystallography Ferromagnetism chemistry Phase (matter) Condensed Matter::Strongly Correlated Electrons |
| Zdroj: | Journal of Applied Physics. 93:4715-4717 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1559939 |
| Popis: | Ferromagnetic behavior of GaN doped with Mn (Ga1−zMnzN) grown by the ammonothermal and chemical transport methods is discussed in terms of a second phase (ferromagnetic one) produced during the growth process. The reference manganese nitride samples grown by the same method as (Ga,Mn)N reveal room-temperature ferromagnetic behavior, depending on the growth details. Different MnxNy phases are suggested to be responsible for ferromagnetic behavior of (Ga,Mn)N. |
| Databáze: | OpenAIRE |
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