| Autor: |
A. Sakata, S. Yamashita, S. Omoto, M. Hatano, J. Wada, K. Higashi, H. Yamaguchi, T. Yosho, K. Imamizu, M. Yamada, M. Hasunuma, S. Takahashi, A. Yamada, T. Hasegawa, K. Motoyama, M. Tagami, T. Kitano, H. Kaneko, Shinichi Ogawa, Paul S. Ho, Ehrenfried Zschech |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.2815787 |
| Popis: |
Titanium (Ti) has been proposed as an excellent barrier metal (BM) material for ULSI's Cu metallization from the stand point of two characteristics. One is the oxidation property, especially for the porous low‐k ILD materials for 45 nm node device; the other is the interface behavior of Ti with Cu. Both stress induced voiding (SIV) suppression and one order longer electromigration (EM) lifetime were obtained by the adoption of Ti‐BM instead of the conventional Tantalum (Ta)‐BM. SIV failure is accelerated in porous low‐k ILD by the following steps; 1) BM oxidation by the absorbed moisture in porous low‐k ILD, 2) Adhesion degradation caused by the BM oxidation results in micro delamination of Cu film (void nucleation), 3) Void growth induced by the stress gradient in the Cu interconnect. It has been considered that the small volume change of Ti oxidation and the existence of metallic Ti‐O solid‐solution phase would be the reason for control of moisture penetration from the low‐k ILD materials. In addition, ... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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