Stimulated Brillouin Scattering in Low-Loss Ge25Sb10S65 Chalcogenide Waveguides

Autor:	Bin Zhang, Dong Liu, Siqing Zeng, Xiaojie Guo, Lei Wan, Wentao Peng, Tianhua Feng, Jingshun Pan, Jingcui Song, Zhaohui Li, Mingjie Zhang
Rok vydání:	2021
Předmět:	Materials science Chalcogenide Scattering business.industry Waveguide (optics) Atomic and Molecular Physics and Optics Optical pumping Brillouin zone Resonator chemistry.chemical_compound Laser linewidth chemistry Brillouin scattering Optoelectronics business
Zdroj:	Journal of Lightwave Technology. 39:5048-5053
ISSN:	1558-2213 0733-8724
Popis:	In this work, we report experimental characterizations of stimulated Brillouin scattering (SBS) in low-loss Ge25Sb10S65 (GeSbS) chalcogenide waveguides. A 7-cm-long spiral waveguide with a propagation loss as low as 0.2 dB/cm and a microring resonator with a high loaded quality factor of 1.34×106 are demonstrated. In addition, we use a high-resolution pump-probe measurement technique to investigate the SBS characteristics in the GeSbS waveguide. The measured Brillouin frequency shift and the intrinsic Brillouin linewidth are 7.443 GHz and 47.8 MHz, respectively. A Brillouin-gain coefficient of 338 m−1W−1 is obtained, which corresponds to an intrinsic Brillouin gain of 0.524×10-9 m/W, comparable to that of As2S3 chalcogenide. Moreover, a 17.6-dB probe gain is achieved with a continuous-wave pump of 200 mW, while nonlinear losses are not observed. The large Brillouin gain, together with the low linear propagation loss and the negligible nonlinear loss, make the GeSbS chalcogenide waveguides become a very promising arsenic-free integrated platform for on-chip Brillouin applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::045c47cff3f867922cfeccc64c4cb589 https://doi.org/10.1109/jlt.2021.3078722 Zobrazit plný text záznamu