| Autor: |
Bruno Gérard, Valdas Pasiskevicius, Fredrik Laurell, Giriprasanth Omanakuttan, Tajkia Syeed Tofa, Axel Strömberg, Pooja Vardhini Natesan, Hoon Jang, Yan-Ting Sun, A. Grisard, Sebastian Lourdudoss |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Compound Semiconductor Week (CSW). |
| Popis: |
Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm−1) was obtained in terahertz range. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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