Practical approach to determining charge collected in multi-junction structure due to the ion shunt effect
| Autor: | S.E. Kerns, W.J. Stapor, Bharat L. Bhuva, A.O. Brown |
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| Rok vydání: | 1993 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Mathematical model Computer program business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Charged particle Computational physics Ion law.invention Semiconductor Nuclear Energy and Engineering CMOS Hardware_GENERAL law Electronic engineering Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Nuclear Science. 40:1918-1925 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.273463 |
| Popis: | Presents the algorithms and results of a computer program used to determine the charge collected on silicon semiconductor transistors due to the ion shunt effect. The authors present results for a typical silicon CMOS structure and discuss the effects of voltage, ion energy, and structure on the charge collected. The computer program uses an algorithm to produce a realistic e-h pair distribution. This initial distribution is shown to greatly affect the amount of charge collected. Therefore, typical simulators that assume uniform and energy-independent distributions will be inaccurate. The program determines the e-h distributions with respect to time by solving the ambipolar diffusion equation at various depths within the shunt. From the e-h pair distributions, the time-dependent resistances can be determined and the collected charge can be determined as a function of time. > |
| Databáze: | OpenAIRE |
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