ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation

Autor:	Pavel A. Chubunov, R. G. Useinov, O. V. Meschurov, A. G. Baz, V. M. Uzhegov, Gennady I. Zebrev, P. A. Zimin, Vasily S. Anashin, Elizaveta V. Mrozovskaya
Rok vydání:	2018
Předmět:	Dosimeter Materials science Silicon 010308 nuclear & particles physics business.industry chemistry.chemical_element Charge (physics) Dielectric Trapping 01 natural sciences Threshold voltage chemistry Logic gate 0103 physical sciences Optoelectronics business Sensitivity (electronics)
Zdroj:	2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
DOI:	10.1109/radecs45761.2018.9328654
Popis:	It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::044927fad8f76a7450f968c55edfb5c4 https://doi.org/10.1109/radecs45761.2018.9328654 Zobrazit plný text záznamu