Single electron tunneling of nanoscale TiSi2 islands on Si
| Autor: | Vincent Meunier, Jaehwan Oh, Robert J. Nemanich, Hoon Ham |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Silicon business.industry Scanning tunneling spectroscopy General Physics and Astronomy chemistry.chemical_element Nanotechnology Spin polarized scanning tunneling microscopy Epitaxy Electrochemical scanning tunneling microscope law.invention chemistry Tunnel junction law Optoelectronics Thin film Scanning tunneling microscope business |
| Zdroj: | Journal of Applied Physics. 92:3332-3337 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Nanoscale TiSi2 islands are formed by electron beam deposition of a few monolayers of titanium on an atomically clean silicon surface followed by in situ annealing at high temperatures (800–1000 °C). The lateral diameter of typical islands are ∼5 nm, and they form a nanoscale metal–semiconductor interface. Direct probing of the electrical characteristics of these islands on both p- and n-type Si substrates was performed using ultrahigh vacuum scanning tunneling microscopy and scanning tunneling spectroscopy. With the vacuum between the tip and the island as a second tunnel junction, we thus form a double-junction system for observation of single electron tunneling (SET) effects. Moreover, the small dimensions of the system allow room temperature observation. The results showed features in the I–V spectra attributed to single electron tunneling. Features were more evident when the island–Si junction was in reverse bias. For substrates with a thin epitaxial layer of intrinsic Si, the tunneling related featu... |
| Databáze: | OpenAIRE |
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