Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
| Autor: | Tetsuya Tamura, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Chlorine trifluoride Atomic force microscopy Mechanical Engineering fungi technology industry and agriculture chemistry.chemical_element Mineralogy macromolecular substances Condensed Matter Physics Nitrogen chemistry.chemical_compound stomatognathic system chemistry Etch pit density Mechanics of Materials Etching (microfabrication) Halogen Chlorine General Materials Science Composite material Dislocation |
| Zdroj: | Materials Science Forum. :589-592 |
| ISSN: | 1662-9752 |
| Popis: | An etch pit shape of off-angled 4H-SiC Si-face formed by different halogen gases such as chlorine trifluoride (ClF3) and a mixed gas (O2+Cl2) of oxygen and chlorine in nitrogen (N2) ambience has been studied. One kind of etch pit with the crooked hexagon was formed at etching temperature under 500oC. The angle of etch pit measured by the cross-sectional atomic force microscope image was about 10o from the [11-20] view. A dislocation type of the etch pit was discussed in comparison with the etch pit shape and an X-ray topography image. |
| Databáze: | OpenAIRE |
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