| Autor: |
Jan Misiewicz, Jarosław Serafińczuk, Artur Podhorodecki, Marek Tłaczała, R. Korbutowicz, Regina Paszkiewicz, Joanna Prazmowska, Adam Szyszka |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
Vacuum. 82:988-993 |
| ISSN: |
0042-207X |
| DOI: |
10.1016/j.vacuum.2008.01.037 |
| Popis: |
The influence of deposition conditions of nucleation GaN layer on the properties of high-temperature GaN layer, grown on sapphire substrates, was investigated. The hydride vapor phase epitaxy (HVPE) three-section horizontal hot-wall furnace technique was applied. Various temperatures, HCl flows and time intervals of nucleation layer growth were utilized. Based on previous studies the following experimental conditions were selected: temperature was kept at 450 or 570 °C, and HCl flows were 8 or 10 sccm/min. The duration of nucleation layer deposition was 5, 7 and 9 min. The scanning electron microscopy technique was applied for the investigation of nucleation layer morphology after migration. Thick GaN layers were deposited during the three-step growth process at 1060 °C. Samples with various surface morphologies were obtained. Photoluminescence spectra and X-ray measurements were performed, which permitted clarifications of the influence of growth conditions of the nucleation layer on the properties of high-temperature layers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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