Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications
| Autor: | Silke Christiansen, R.K. Singh, U. Gösele, R. Scholz, U. Dadwal, Oussama Moutanabbir |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Hydrogen Atomic force microscopy business.industry Annealing (metallurgy) Wide-bandgap semiconductor chemistry.chemical_element Nanotechnology Condensed Matter Physics law.invention Ion Semiconductor chemistry Optical microscope law Transmission electron microscopy Optoelectronics business |
| Zdroj: | physica status solidi c. 7:44-47 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.200982630 |
| Popis: | We present an overview of the implantation-induced blistering/exfoliation process in wide bandgap semiconductors such as GaN, AlN and ZnO. These semiconductors were implanted with 50 keV hydrogen ions at various fluences and subsequently annealed at higher temperatures up to 800 °C in order to trigger surface blistering. In the case of GaN and AlN, a detailed blistering kinetics investigation was also performed. Various techniques such as optical microscopy, atomic force microscopy, cross-sectional transmission electron microscopy and stylus profilometry were used for the characterization of the implanted samples. In the case of room temperature implanted samples, it was observed that the damage band formed inside the samples was decorated with hydrogen filled nanovoids. These nanovoids served as precursors for the formation of two-dimensional extended defects called nanocracks and microcracks upon annealing and eventually led to surface blistering or exfoliation. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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