Physical modeling and alleviation of shallow trench-isolation charging effects in silicon-on insulator complementary bipolar technology
| Autor: | J. De Santis, Wipawan Yindeepol, C. Bulucea, T. Krakowski, Richard W. Foote |
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| Rok vydání: | 2004 |
| Předmět: |
Dielectric isolation
Materials science business.industry Bipolar junction transistor Bipolar process Electrical engineering Oxide Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Capacitance chemistry.chemical_compound chemistry Shallow trench isolation Hardware_INTEGRATEDCIRCUITS Optoelectronics business |
| Zdroj: | Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting. |
| DOI: | 10.1109/bipol.2004.1365740 |
| Popis: | Oxide charging, adversely influencing PNP collector-base capacitance, has been observed and modeled physically in a complementary bipolar process that uses dielectric isolation. A practical solution to alleviate this effect is described along with trade-offs involved in process and device design. |
| Databáze: | OpenAIRE |
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