Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering
| Autor: | Ssatoshi Yokota, Ryo Hattori, Hideo Takeuchi, Soichiro Ukawa, Akihiro Shima, Yoshitugu Yamamoto, Wataru Susaki, Nobuhito Ohno, Yutaka Mihashi |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Condensed matter physics Self excited Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Laser Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention symbols.namesake law Computer Science::Multimedia symbols Double quantum Waveguide Raman scattering Quantum well Energy (signal processing) |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 21:793-797 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2003.11.202 |
| Popis: | Subband energy levels of AlGaAs double quantum well (QW) layer structure with a separate confinement scheme are determined by photoreflectance at room temperature. Also subband energy levels are compared with those determined by the self-excited electron Raman scattering of lasers fabricated from the same QW structure but with different waveguide thickness outside the QWs. Electron subbands, heavy hole subbands, light hole subbands, determined both measurements, are in good agreement. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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