Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview

Autor:	Dim-Lee Kwong, Giwan Yoon, Unnikrishnan Sreenath, Jin-ha Kim
Rok vydání:	1994
Předmět:	Fabrication Materials processing Materials science Thermal chemical vapor deposition Ic manufacturing Semiconductor device fabrication Process control Nanotechnology Wafer Integrated processing
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.167329
Popis:	Rapid thermal chemical vapor deposition (RT-CVD) technology is strategically important for deep submicron ULSI manufacturing because of trends towards reduced thermal budget and tightened process control requirements on large diameter Si wafers, and has thus received considerable attention. In this paper, we will review the significant benefits provided by a novel in-situ multi-processing RT-CVD for IC manufacturing and the considerable progress made in developing RT-CVD as a integrated processing module capable of meeting the stringent requirements of ULSI device fabrication.
Databáze:	OpenAIRE
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