A Monte Carlo Binary Collision Model for BF 2 Implants into (100) Single‐Crystal Silicon
| Autor: | B. Obradovich, Al F. Tasch, S.-H. Yang, K. Parab, C. M. Snell, M. Morris, S. Morris, S. Tian |
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| Rok vydání: | 1996 |
| Předmět: |
Range (particle radiation)
Materials science Silicon Renewable Energy Sustainability and the Environment Quantitative Biology::Tissues and Organs Monte Carlo method chemistry.chemical_element Semiconductor device Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Computational physics Tilt (optics) Ion implantation chemistry Materials Chemistry Electrochemistry Rotation (mathematics) Energy (signal processing) |
| Zdroj: | Journal of The Electrochemical Society. 143:3784-3790 |
| ISSN: | 1945-7111 0013-4651 |
| Popis: | This paper describes a physically based Monte Carlo model and simulator for accurate simulation of BF{sub 2} ion implantation in (100) single-crystal silicon. An improved electronic stopping model and a damage generation model have been developed and implemented in the simulator. These new, physically based, models greatly improve the capability for predicting BF{sub 2} as-implanted profiles. The profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy can be very well predicted over the energy range from 15 to 65 keV. |
| Databáze: | OpenAIRE |
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