Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters
| Autor: | D. S. Green, Eric R. Heller, R. Vetury |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Transistor Semiconductor device modeling Gallium nitride High-electron-mobility transistor Finite element method Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Logic gate Calibration Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 58:1091-1095 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2011.2107913 |
| Popis: | We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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