| Autor: |
Umesh K. Mishra, Andrew M. Armstrong, D. S. Green, James S. Speck, Steven A. Ringel, Aaron R. Arehart |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
physica status solidi (c). 2:2411-2414 |
| ISSN: |
1610-1634 |
| DOI: |
10.1002/pssc.200461594 |
| Popis: |
A novel method to characterize deep levels in wide bandgap, semi-insulating materials is presented. This new method combines deep level optical spectroscopy with a lighted capacitance-voltage profiling method to study the defect spectra of n-type and semi-insulating GaN co-doped with C and Si. Two prominent deep acceptor levels at EC – 2.54 and 3.28 eV are found to depend strongly on C incorporation. The relationship between the concentration of these defects and C incorporation offers insight into the mechanism responsible for rendering GaN:C semi-insulating. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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