Time-Resolved Micro-Beam X-Ray Absorption Fine Structure (XAFS) Measurement to Investigate the Cause of a Current Collapse of GaN-HEMTs
| Autor: | Hiroshi Yamamoto, Junji Iihara, Takashi Nakabayashi, Yasunori Tateno, Tsutomu Komatani, Tsuyoshi Kouchi, Takumi Yonemura, Yoshihiro Saito |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Electrical engineering Gallium nitride 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences XANES X-ray absorption fine structure Stress (mechanics) chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics Equivalent circuit 010306 general physics 0210 nano-technology business Absorption (electromagnetic radiation) Voltage |
| Zdroj: | 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). |
| Popis: | The purpose of our work was to carry out a direct measurement of a GaN's surface condition under a voltage stress, and to identify a cause of a current collapse. Using pulsed S-parameters measurements immediately after the voltage stress was applied for the GaN HEMT, equivalent circuit parameters were extracted, and we estimated the virtual gate length which induced the current collapse. And we carried out time resolved micro-beam X-ray Absorption Fine Structure (XAFS) measurement after the voltage stress was applied. As a result, by the applied voltage stress, an X-ray Absorption Near Edge Structure (XANES) spectrum of gallium, Ga, was found to be changed. This means the surface condition of GaN was changed in the virtual gate region by the voltage stress. |
| Databáze: | OpenAIRE |
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