Design considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range
| Autor: | Cesar Braz, Ralf Siemieniec, Oliver Blank |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Field (physics) business.industry Computer science 020208 electrical & electronic engineering Transistor Electrical engineering Charge (physics) 02 engineering and technology Blocking (statistics) 01 natural sciences Power (physics) law.invention Reduction (complexity) Hardware_GENERAL law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Power semiconductor device Electrical and Electronic Engineering Power MOSFET business |
| Zdroj: | IET Power Electronics. 11:638-645 |
| ISSN: | 1755-4543 |
| DOI: | 10.1049/iet-pel.2017.0385 |
| Popis: | Low-voltage power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on charge compensation using a field plate offer a significant reduction of the area-specific on-resistance. The extension of their blocking capability into the so-called medium-voltage range of 150-300 V promises devices with excellent properties being attractive for a wide range of applications. There are two approaches how this voltage-range extension can be realised. Both concepts are linked to different device performance and different development effort. This study discusses both concepts using the example of the 150 V device class and compares the performance gained at the device and application level. |
| Databáze: | OpenAIRE |
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