Cu-CVD process optimised in a cluster equipment for IC manufacturing
| Autor: | J. L. Mermet, J. Palleau, E. Richard, B. Alaux, C. Marcadal, J. Torres, Mouloud Bakli |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Void (astronomy)
Reproducibility Materials science Nucleation chemistry.chemical_element Condensed Matter Physics Copper Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Volumetric flow rate Chemical engineering Ic manufacturing chemistry Delivery system Electrical and Electronic Engineering Water vapor |
| Zdroj: | Microelectronic Engineering. 33:3-13 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(96)00025-1 |
| Popis: | A complete optimisation of the copper CVD deposition was achieved with a bubbler delivery system. However the deposition rate was found to be limited to 30 nm/min. With a DLI delivery system, a major improvement of the deposition rate 100 nm/min was achieved at high Cupraselect® flow rate with a void free deposition. The nucleation delay, the deposition rate and the reproducibility were dramatically improved by water vapour addition. From the experimental results, an explanation has been proposed for this effect. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect