Interface‐state parameter determination by deep‐level transient spectroscopy
| Autor: | T. J. Tredwell, C. R. Viswanathan |
|---|---|
| Rok vydání: | 1980 |
| Předmět: |
Deep-level transient spectroscopy
Physics and Astronomy (miscellaneous) Silicon Chemistry Band gap business.industry Analytical chemistry chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Signal Computer Science::Other law.invention Capacitor law Hardware_INTEGRATEDCIRCUITS Optoelectronics Charge carrier Electric potential Spectroscopy business |
| Zdroj: | Applied Physics Letters. 36:462-464 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.91507 |
| Popis: | A modification of the deep‐level transient spectroscopy (DLTS) technique for determination of interface‐state parameters is described. In this technique, the surface potential dependence of the interface‐state emission signal in a MOS capacitor was used to determine the energy of the emitting states. The technique allows accurate determination of majority‐carrier cross section and interface‐state density as functions of energy in the gap. Experimental results are presented for n‐ and p‐type MOS capacitors on n 〈100〉 silicon. |
| Databáze: | OpenAIRE |
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