MOS Dosimeter Based on Ge Nanocrystals in Hfo2
| Autor: | Magdalena Lidia Ciurea, T. Stoica, Ana-Maria Lepadatu, C. Palade, Ionel Stavarache, I. Dascalescu, Sorina Lazanu, A. Slav, O. Cojocaru |
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| Rok vydání: | 2018 |
| Předmět: |
Fabrication
Dosimeter Materials science Silicon business.industry chemistry.chemical_element Particle irradiation 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology 030218 nuclear medicine & medical imaging law.invention 03 medical and health sciences Capacitor 0302 clinical medicine chemistry Nanocrystal law Optoelectronics Rapid thermal annealing 0210 nano-technology business |
| Zdroj: | 2018 International Semiconductor Conference (CAS). |
| Popis: | Trilayer MOS capacitors gate HfO 2 / floating gate of Ge nanocrystals in HfO 2 / tunnel HfO 2 / Si substrate were prepared in the aim to be used for the detection of ionizing radiation. Magnetron sputtering and rapid thermal annealing were used for their fabrication. Capacitance-voltage measurements showed that Ge nanocrystals are the most important charge storage centres in our structure. The possibility to use these trilayer MOS capacitors as dosimeters was investigated, and the sensitivity to a particle irradiation was extracted. |
| Databáze: | OpenAIRE |
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