Investigation of the data retention mechanism and modeling for the high reliability embedded split-gate MONOS flash memory

Autor:	Yoshiyuki Kawashima, Ichiro Yamakawa, Takashi Hashimoto
Rok vydání:	2015
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Thermionic emission Nitride Atmospheric temperature range Temperature measurement Flash memory Reliability (semiconductor) chemistry Electronic engineering Optoelectronics Data retention business
Zdroj:	IRPS
DOI:	10.1109/irps.2015.7112809
Popis:	We investigated the data retention mechanism of metal-oxide nitride oxide silicon (MONOS) flash memory. We developed a data retention model that is based on the thermionic emissions and the simple estimation method with a long lifetime and a wide temperature range. The estimated retention results from using the new method were in good agreement with the measurement retention results from more than 6 years and within a temperature range from 150–450°C. The MONOS memory with split-gate (SG-MONOS) we created has a 20-yr lifetime at more than 200°C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::03b5204e4e754841391b62e6b5103786 https://doi.org/10.1109/irps.2015.7112809 Zobrazit plný text záznamu