Reduction of crack density in ammonothermal bulk GaN growth
| Autor: | Daryl Key, Tadao Hashimoto, Edward Letts |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Inorganic Chemistry law 0103 physical sciences Materials Chemistry Optoelectronics Wafer High power electronics 0210 nano-technology business Diode Light-emitting diode |
| Zdroj: | Journal of Crystal Growth. 456:27-32 |
| ISSN: | 0022-0248 |
| Popis: | The growth of high quality GaN by the ammonothermal method is appealing due to the potential to scale and achieve very high crystal quality. Several applications could benefit from the supply of very high quality GaN such as high power light emitting diodes, laser diodes, and high power electronics. Despite steady advancement by the few groups developing ammonothermal growth technology, high quality ammonothermal GaN wafers have yet be manufactured in great quantities. This paper reviews the current progress of ammonothermal growth at SixPoint Materials. Growths were performed at T |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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