Wafer bevel shape inducing high defect density in shallow trench isolation process

Autor:	C. Mouroux, J. Leroueille, L. Vallier, O. Bernaud, K. Tastets, N. Wlodarczyk, V. Dureuil, Jean-Luc Baltzinger
Rok vydání:	2010
Předmět:	chemistry.chemical_compound Yield (engineering) Materials science Resist chemistry Shallow trench isolation Oxide Electronic engineering Wafer Substrate (electronics) Composite material Crystallographic defect Bevel
Zdroj:	2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
DOI:	10.1109/asmc.2010.5551455
Popis:	The defect density reduction is one of the main challenges to increase the yield. This article presents a mechanism of defect formation specific to the STI module. This defect - flake like - appears during HDP-CVD process deposition. It comes from oxide bubbles localised at the bevel of the substrate. The suppression of this defect consists into the bevel shape optimization. Moreover, process improvement as resist strip post etch contributes to clean the bevel from polymer and reduces strongly the flakes density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::03b09ffb1f7d75831a2befea7e23451a https://doi.org/10.1109/asmc.2010.5551455 Zobrazit plný text záznamu