Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
| Autor: | Evelyn L. Hu, Umesh Mishra, Yong-Hoon Cho, J. J. Song, Steven P. DenBaars, M. S. Minsky, Sarah L. Keller |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) Silicon business.industry Superlattice Doping Analytical chemistry chemistry.chemical_element Chemical vapor deposition symbols.namesake Laser linewidth chemistry Stokes shift symbols Optoelectronics Spontaneous emission business |
| Zdroj: | Applied Physics Letters. 73:1128-1130 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | We have systematically studied the influence of Si doping on the characteristics of InGaN/GaN multiple quantum wells (MQWs) by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy. The twelve- period MQWs were grown by metalorganic chemical vapor deposition. Si doping in the GaN barriers was varied from 1×1017 to 3×1019 cm−3. Information on the structural quality of the MQWs as a function of Si doping was extracted from the linewidth broadening of the higher-order superlattice satellite peaks measured in HRXRD. The HRXRD measurements indicate that increased Si doping results in better interface properties of the MQWs. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease from ∼30 ns (for n |
| Databáze: | OpenAIRE |
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