SiC MOSFET Avalanche Breakdown Voltage Model for Temperature and Gate Voltage Dependence
| Autor: | A. LLamazares, M. Garcia-Gracia, S. Martin-Arroyo, J.A. Cebollero |
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| Rok vydání: | 2021 |
| Zdroj: | 2021 4th International Symposium on Advanced Electrical and Communication Technologies (ISAECT). |
| DOI: | 10.1109/isaect53699.2021.9668386 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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