Pressure-induced metal–insulator transitions in chalcogenide NiS2-Se
| Autor: | Changyoung Kim, Myeong Jun Oh, Woun Kang, Younjung Jo, Muhammad Nauman, Garam Han, Tayyaba Hussain |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Condensed matter physics Chalcogenide Transition temperature Hydrostatic pressure 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Paramagnetism chemistry.chemical_compound Magnetization chemistry 0103 physical sciences Antiferromagnetism Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering 010306 general physics 0210 nano-technology Phase diagram |
| Zdroj: | Physica B: Condensed Matter. 536:235-238 |
| ISSN: | 0921-4526 |
| Popis: | We report the temperature-dependent resistivity ρ(T) of chalcogenide NiS2-xSex (x = 0.1) using hydrostatic pressure as a control parameter in the temperature range of 4–300 K. The insulating behavior of ρ(T) survives at low temperatures in the pressure regime below 7.5 kbar, whereas a clear insulator-to-metallic transition is observed above 7.5 kbar. Two types of magnetic transitions, from the paramagnetic (PM) to the antiferromagnetic (AFM) state and from the AFM state to the weak ferromagnetic (WF) state, were evaluated and confirmed by magnetization measurement. According to the temperature–pressure phase diagram, the WF phase survives up to 7.5 kbar, and the transition temperature of the WF transition decreases as the pressure increases, whereas the metal–insulator transition temperature increases up to 9.4 kbar. We analyzed the metallic behavior and proposed Fermi-liquid behavior of NiS1.9Se0.1. |
| Databáze: | OpenAIRE |
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