The effect of irradiation-induced lattice strain on the width of local mode absorption lines in silicon

Autor:	R C Newman, D H J Totterdell
Rok vydání:	1975
Předmět:	Materials science Absorption spectroscopy Silicon Doping technology industry and agriculture General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Condensed Matter Physics Oxygen Neutron temperature chemistry Impurity Irradiation Carbon
Zdroj:	Journal of Physics C: Solid State Physics. 8:589-598
ISSN:	0022-3719
DOI:	10.1088/0022-3719/8/5/007
Popis:	Samples of silicon doped with oxygen alone, or with oxygen and carbon have been irradiated with fast neutrons up to a maximum dose of 1020 cm-2. It is shown that there is a progressive decrease in the resolution of the fine structure of the 9 mu m band due to oxygen, and a corresponding increase in the width of the band at 12 mu m due to (O-V)0 centres. These measurements have also been made on samples containing group III and/or group V impurities; the degree of disorder in these samples is greater showing that there are important impurity effects. These results are compared with the structure of the 9 mu m band found in silicon after implantation with 400 keV oxygen ions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::038c494bbdf472e0cc3385cba0139924 https://doi.org/10.1088/0022-3719/8/5/007 Zobrazit plný text záznamu