Thin film encapsulants for annealing GaAs and InP

Autor: J. D. Oberstar, B.G Streetman
Rok vydání: 1983
Předmět:
Zdroj: Thin Solid Films. 103:17-26
ISSN: 0040-6090
DOI: 10.1016/0040-6090(83)90421-2
Popis: Methods for protecting GaAs and InP surfaces against degradation during annealing are reviewed. Various thin film encapsulants are discussed, including SiO2, Si3N4 and doped glasses. A discussion of deposition methods and thin film evaluation techniques is presented.
Databáze: OpenAIRE