Thin film encapsulants for annealing GaAs and InP
Autor: | J. D. Oberstar, B.G Streetman |
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Rok vydání: | 1983 |
Předmět: | |
Zdroj: | Thin Solid Films. 103:17-26 |
ISSN: | 0040-6090 |
DOI: | 10.1016/0040-6090(83)90421-2 |
Popis: | Methods for protecting GaAs and InP surfaces against degradation during annealing are reviewed. Various thin film encapsulants are discussed, including SiO2, Si3N4 and doped glasses. A discussion of deposition methods and thin film evaluation techniques is presented. |
Databáze: | OpenAIRE |
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