Band-gap engineering in sputter-deposited ScxGa1−xN

Autor:	M. E. Kordesch, M. E. Little
Rok vydání:	2001
Předmět:	Materials science Physics and Astronomy (miscellaneous) Band gap Alloy Analytical chemistry chemistry.chemical_element engineering.material Amorphous solid Microcrystalline chemistry Sputtering X-ray crystallography engineering Scandium Thin film
Zdroj:	Applied Physics Letters. 78:2891-2892
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1370548
Popis:	Reactive sputtering was used to grow thin films of ScxGa1−xN with scandium concentration of 20%–70% on quartz substrates at temperatures of 300–675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or microcrystalline. Optical absorption spectra were taken of each sample and the optical band gap was determined. The band gap varied linearly with composition between 2.0 and 3.5 eV. ScN and GaN have different crystal structures (rocksalt and wurzite, respectively), and thus may form a heterogeneous mixture as opposed to an alloy. Since the XRD data were inconclusive, bilayers of ScN/GaN were grown and optical absorption spectra taken. A fundamental difference in the spectra between the bilayer films and alloy films was seen, suggesting the films are alloys not heterogeneous mixtures.
Databáze:	OpenAIRE
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