Characteristics of InGaP/InGaAs Pseudomophic Field-Effect Transistors with Modulated InGaAs Doping Channels

Autor:	Yi-Ting Chao, Wen-Chau Liu, Syuan-Hao Liou, Jung-Hui Tsai, Pao-Sheng Lin
Rok vydání:	2018
Předmět:	010302 applied physics Materials science business.industry Doping Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 0103 physical sciences Optoelectronics General Materials Science Field-effect transistor 0210 nano-technology business
Zdroj:	Science of Advanced Materials. 10:632-635
ISSN:	1947-2935
DOI:	10.1166/sam.2018.3136
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::03764bbb790e7e4bd7eef4edf5f89bf7 https://doi.org/10.1166/sam.2018.3136 Zobrazit plný text záznamu