Role of Metallic Oxides in Semiconducting Microwave Detectors and Superconductors
| Autor: | S D Chatterjee, T K Sengupta |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Superconductivity
Materials science Mixed metal business.industry Computer Science Applications Theoretical Computer Science Metal Condensed Matter::Materials Science Semiconductor Rectification visual_art Electronic engineering visual_art.visual_art_medium Microwave detectors Optoelectronics Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering business Microwave Oxygen excess |
| Zdroj: | IETE Journal of Research. 37:398-400 |
| ISSN: | 0974-780X 0377-2063 |
| DOI: | 10.1080/03772063.1991.11436992 |
| Popis: | Early microwave detectors consisted of loose metal-metal contact of which at least one metal-surface was automatically oxidised under ordinary atmospheric conditions. Metal-excess oxides behave as n-type semiconductors and metal-deficient or oxygen excess oxides behave as p-type ones. In one of the typical microwave sensors a rather thick ZnO film was electrochemically deposited on mother Zn. Later a mechanically pressed point-metallic contact was made on it. Nonlinear I-V characteristics were obtained showing rectification properties. Some complex mixed metal oxides behave as warm superconductors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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