Effects of microgravity on Hg1−xCdxTe/()CdTe epitaxy by CVT under transient growth conditions

Autor:	Yu-Ru Ge, Heribert Wiedemeier, Mark A. Hutchins
Rok vydání:	1998
Předmět:	Electron mobility business.industry Chemistry Heterojunction Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Inorganic Chemistry Optics Materials Chemistry Optoelectronics Deposition (phase transition) Dislocation Thin film business Layer (electronics)
Zdroj:	Journal of Crystal Growth. 187:72-80
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(97)00834-8
Popis:	Transient epitaxial growth experiments of Hg1−xCdxTe on ( 1 0 0 )CdTe substrates by chemical vapor transport (CVT), using HgI2 as a transport agent, were performed at normal and reduced gravity during the USML-2 flight. The carrier mobility at 77 K of the epitaxial layer grown in microgravity is about twice that of the ground specimen. This result is related to the improved compositional uniformity (IR mapping) and structural quality (X-ray rocking curves) of the space-grown epitaxial layer and islands relative to ground samples. These observations and the lower dislocation density of the growth interface in microgravity demonstrate the effects of residual convective flow on the transport and deposition processes on ground near the solid–vapor interface of this system in the transient growth regime.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0373ff9f2460ddd031a47b5b0cbb7d0b https://doi.org/10.1016/s0022-0248(97)00834-8 Zobrazit plný text záznamu Full Text from ScienceDirect