Analytic Solution for Symmetric DG MOSFETs with Gate-Oxide-Thickness Asymmetry

Autor:	Ratul Kr. Baruah, Nipanka Bora
Rok vydání:	2011
Předmět:	Computational Mathematics Materials science Condensed matter physics Gate oxide media_common.quotation_subject General Materials Science General Chemistry Electrical and Electronic Engineering Condensed Matter Physics Analytic solution Asymmetry media_common
Zdroj:	Journal of Computational and Theoretical Nanoscience. 8:2025-2028
ISSN:	1546-1963 1546-1955
DOI:	10.1166/jctn.2011.1920
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::036f6b7f4cccce0ee32f8499791b8f36 https://doi.org/10.1166/jctn.2011.1920 Zobrazit plný text záznamu