Poisson Ratio of Epitaxial Germanium Films Grown on Silicon
| Autor: | Jagdish Narayan, Jayesh Bharathan, George A. Rozgonyi, Gary E. Bulman |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Materials science Silicon Solid-state physics Condensed matter physics chemistry.chemical_element Germanium Condensed Matter Physics Epitaxy Poisson's ratio Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Crystallography chemistry X-ray crystallography Materials Chemistry symbols Electrical and Electronic Engineering Thin film |
| Zdroj: | Journal of Electronic Materials. 42:40-46 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-012-2337-6 |
| Popis: | An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual thermal strain to measure the Poisson ratio of Ge films grown on Si ⟨001⟩ substrates, using the sin2ψ method and high-resolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared with the bulk value of 0.27. Our study indicates that use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink