| Autor: |
Tadaharu Minato, Y. Kusakabe, T. Hagihara, Y. Fujita, Suzuki Kenji, H. Uemura, S. Momii, K. Uryu, Yasuhiro Yoshiura, Y. Miyazaki, Masayoshi Tarutani, K. Takakura, M. Nakamura |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: |
The applied voltage (Vcc) dependence of SEB characteristics of the Failure In Time (FIT) is generally estimated by the accelerated test, because it takes a long time to cause SEB under the natural condition. So, it is meaningful to confirm the relationship among Field Failure Rate (FFR), SEB, FIT and CBS characteristic. Through physical analysis, the destruction point is confirmed to be located around the electric field peak position during SEB experiment using the neutron irradiation. After both SEB curve fitting and sufficient numbers of analysis for the destruction points, the first major factor to characterize the SEB curve is confirmed to be the electric field strength. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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