Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates
| Autor: | Demid A. Kirilenko, T. V. Shubina, Stefan Ivanov, Nadezda Kuznetsova, Alexander N. Smirnov, V. Yu. Davydov, Dmitrii V. Nechaev, V. N. Jmerik, S I Troshkov |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence business.industry Nucleation 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Surface energy Inorganic Chemistry 0103 physical sciences Materials Chemistry Sapphire Optoelectronics Nanorod 0210 nano-technology business Quantum well |
| Zdroj: | Journal of Crystal Growth. 477:207-211 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.05.014 |
| Popis: | The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (µ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration enhanced epitaxy provides the best selectivity for nucleation of NRs on the apexes of 3.5-µm-diameter cones, whereas the subsequent growth of 1-μm-high NRs with a constant diameter of about 100 nm proceeds by standard high-temperature PA MBE at nitrogen-rich conditions. These results are explained by anisotropy of the surface energy for GaN of different polarity and crystal orientation. The InGaN single quantum wells inserted in the GaN NRs grown on the µ-CPSS demonstrate photoluminescence at 510 nm with a spatially periodic variation of its intensity with a period of ∼6 µm equal to that of the substrate patterning profile. |
| Databáze: | OpenAIRE |
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