Improved substrate temperature stability during molecular beam epitaxy growth using indium free mounting of small substrates of various shapes
| Autor: | P. N. Grillot, R. N. Sacks, R. M. Sieg, Steven A. Ringel |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
inorganic chemicals
Materials science Temperature control business.industry digestive oral and skin physiology chemistry.chemical_element Germanium Surfaces and Interfaces Substrate (electronics) respiratory system engineering.material Condensed Matter Physics Surfaces Coatings and Films chemistry Coating Molybdenum engineering Optoelectronics Wafer business Indium circulatory and respiratory physiology Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:3283-3287 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.580227 |
| Popis: | Large substrate surface temperature decreases are observed during molecular beam epitaxy growth onto small indium bonded substrates, due to coating of the molybdenum block. These large temperature transients, along with other difficulties associated with indium bonding (e.g., potential substrate surface damage, unwanted indium on the back of the substrate) make indium free substrate mounting desirable, however, indium free mounting systems have previously been restricted to whole standard‐sized round wafers. In this study we compare the temperature characteristics of new indium free modular substrate mounting blocks, which can accommodate substrates of various sizes (up to 3 inch diameter) and shapes, with traditional indium mounting of small substrates. Although the new modular indium free holders have a large molybdenum surface area exposed to the molecular beams, we find that the substrate surface temperature transients during growth are reduced to nearly negligible levels versus similar growth on indi... |
| Databáze: | OpenAIRE |
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