TiO2 memristor devices

Autor:	Guru Subramanyam, Tarek M. Taha, Stanley Rogers, Jian Gao, Andrew Sarangan, Chris Yakopcic
Rok vydání:	2011
Předmět:	Hardware_MEMORYSTRUCTURES Materials science Fabrication law Hardware_INTEGRATEDCIRCUITS Nanotechnology Wafer Hardware_PERFORMANCEANDRELIABILITY Memristor Crossbar switch law.invention Resistive random-access memory A titanium
Zdroj:	Proceedings of the 2011 IEEE National Aerospace and Electronics Conference (NAECON).
DOI:	10.1109/naecon.2011.6183085
Popis:	This paper presents the fabrication technique and results obtained for a titanium oxide based memristor design. A memristor wafer was developed that contains isolated devices as well as small memristor crossbar arrays (36 devices). The current-voltage relationship of the devices shows a memristive switching effect that is more apparent when the devices are negatively biased.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::034064a4ae1149158ce1bab9e47460c5 https://doi.org/10.1109/naecon.2011.6183085 Zobrazit plný text záznamu