Hall effect measurements on boron‐doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition

Autor:	Chien‐teh Kao, R. C. Glass, Brian R. Stoner, Dean Malta
Rok vydání:	1993
Předmět:	Electron mobility Physics and Astronomy (miscellaneous) Silicon Misorientation business.industry Chemistry Material properties of diamond Diamond Mineralogy chemistry.chemical_element Chemical vapor deposition engineering.material Epitaxy engineering Optoelectronics Texture (crystalline) business
Zdroj:	Applied Physics Letters. 62:2347-2349
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.109414
Popis:	A highly oriented, (100) textured diamond film was grown on a Si substrate, followed by the deposition of an epitaxial boron‐doped layer for electrical characterization. Temperature‐dependent Hall effect measurements were performed between 180 and 440 K. The 165 cm2/V⋅s hole mobility measured at room temperature is approximately five times greater than the highest reported mobilities for polycrystalline diamond. The relative improvement in the electronic quality of diamond films grown on Si, due to the reduction of misorientation and grain boundary angles, has been demonstrated. X‐ray diffraction pole measurements were performed on the (100) oriented film in order to quantify the degree of misorientation.
Databáze:	OpenAIRE
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